Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/essderc/YoshidaKOS13
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/essderc/YoshidaKOS13
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kengo_Kobayashi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Taiichi_Otsuji
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Suemitsu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Tomohiro_Yoshida
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FESSDERC.2013.6818832
>
foaf:
homepage
<
https://doi.org/10.1109/ESSDERC.2013.6818832
>
dc:
identifier
DBLP conf/essderc/YoshidaKOS13
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FESSDERC.2013.6818832
(xsd:string)
dcterms:
issued
2013
(xsd:gYear)
rdfs:
label
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kengo_Kobayashi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Taiichi_Otsuji
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Tetsuya_Suemitsu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Tomohiro_Yoshida
>
swrc:
pages
115-118
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/essderc/2013
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/essderc/YoshidaKOS13/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/essderc/YoshidaKOS13
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/essderc/essderc2013.html#YoshidaKOS13
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ESSDERC.2013.6818832
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/essderc
>
dc:
title
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document