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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/ets/FonsecaDBGPVB10>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alberto_Bosio>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Arnaud_Virazel>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Luigi_Dilillo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nabil_Badereddine>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Patrick_Girard_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Renan_Alves_Fonseca>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Serge_Pravossoudovitch>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FETSYM.2010.5512768>
foaf:homepage <https://doi.org/10.1109/ETSYM.2010.5512768>
dc:identifier DBLP conf/ets/FonsecaDBGPVB10 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FETSYM.2010.5512768 (xsd:string)
dcterms:issued 2010 (xsd:gYear)
rdfs:label Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alberto_Bosio>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Arnaud_Virazel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Luigi_Dilillo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nabil_Badereddine>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Patrick_Girard_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Renan_Alves_Fonseca>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Serge_Pravossoudovitch>
swrc:pages 132-137 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ETSYM.2010.5512768>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/ets>
dc:title Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document