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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/glvlsi/DentonPN01>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gerold_W._Neudeck>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/John_P._Denton>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sang_Woo_Pae>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1145%2F368122.368897>
foaf:homepage <https://doi.org/10.1145/368122.368897>
dc:identifier DBLP conf/glvlsi/DentonPN01 (xsd:string)
dc:identifier DOI doi.org%2F10.1145%2F368122.368897 (xsd:string)
dcterms:issued 2001 (xsd:gYear)
rdfs:label Vertical integration of submicron MOSFETs in two separate layers of SOI islands formed by silicon epitaxial lateral overgrowth. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gerold_W._Neudeck>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/John_P._Denton>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sang_Woo_Pae>
swrc:pages 129-132 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/glvlsi/2001>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/glvlsi/DentonPN01/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/glvlsi/DentonPN01>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/glvlsi/glvlsi2001.html#DentonPN01>
rdfs:seeAlso <https://doi.org/10.1145/368122.368897>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/glvlsi>
dc:subject SOI MOSFET, selective epitaxial growth, silicon, silicon on insulator, thin film SOI, three dimensional circuits (xsd:string)
dc:title Vertical integration of submicron MOSFETs in two separate layers of SOI islands formed by silicon epitaxial lateral overgrowth. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document