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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/glvlsi/FayBCSMWG99>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Barry_K._Gilbert>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/David_H._Chow>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gary_H._Bernstein>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Joel_N._Schulman>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Patrick_Fay>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pinaki_Mazumder>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/William_Williamson_III>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FGLSV.1999.757401>
foaf:homepage <https://doi.org/10.1109/GLSV.1999.757401>
dc:identifier DBLP conf/glvlsi/FayBCSMWG99 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FGLSV.1999.757401 (xsd:string)
dcterms:issued 1999 (xsd:gYear)
rdfs:label Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Barry_K._Gilbert>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/David_H._Chow>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gary_H._Bernstein>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Joel_N._Schulman>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Patrick_Fay>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pinaki_Mazumder>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/William_Williamson_III>
swrc:pages 162-165 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/glvlsi/1999>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/glvlsi/FayBCSMWG99/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/glvlsi/FayBCSMWG99>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/glvlsi/glvlsi1999.html#FayBCSMWG99>
rdfs:seeAlso <https://doi.org/10.1109/GLSV.1999.757401>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/glvlsi>
dc:subject resonant tunneling diode (RTD), resonant interband tunneling diode (RITD), heterostructure field-effect transistor (HFET), ultra-high-speed logic circuits (xsd:string)
dc:title Integration of InAs/AlSb/GaSb Resonant Interband Tunneling Diodes with Heterostructure Field-Effect Transistors for Ultra-High-Speed Digital Circuit Applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document