A low leakage 9t sram cell for ultra-low power operation.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/glvlsi/LinKL08
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/glvlsi/LinKL08
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Lombardi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sheng_Lin_0006
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yong-Bin_Kim
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1145%2F1366110.1366141
>
foaf:
homepage
<
https://doi.org/10.1145/1366110.1366141
>
dc:
identifier
DBLP conf/glvlsi/LinKL08
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1145%2F1366110.1366141
(xsd:string)
dcterms:
issued
2008
(xsd:gYear)
rdfs:
label
A low leakage 9t sram cell for ultra-low power operation.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Lombardi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sheng_Lin_0006
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yong-Bin_Kim
>
swrc:
pages
123-126
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/glvlsi/2008
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/glvlsi/LinKL08/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/glvlsi/LinKL08
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/glvlsi/glvlsi2008.html#LinKL08
>
rdfs:
seeAlso
<
https://doi.org/10.1145/1366110.1366141
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/glvlsi
>
dc:
subject
leakage power, low power, nanotechnology, sram cell, static noise margin
(xsd:string)
dc:
title
A low leakage 9t sram cell for ultra-low power operation.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document