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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/glvlsi/LinKL10>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Lombardi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sheng_Lin_0006>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yong-Bin_Kim>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1145%2F1785481.1785522>
foaf:homepage <https://doi.org/10.1145/1785481.1785522>
dc:identifier DBLP conf/glvlsi/LinKL10 (xsd:string)
dc:identifier DOI doi.org%2F10.1145%2F1785481.1785522 (xsd:string)
dcterms:issued 2010 (xsd:gYear)
rdfs:label Read-out schemes for a CNTFET-based crossbar memory. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Lombardi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sheng_Lin_0006>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yong-Bin_Kim>
swrc:pages 167-170 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/glvlsi/2010>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/glvlsi/LinKL10/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/glvlsi/LinKL10>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/glvlsi/glvlsi2010.html#LinKL10>
rdfs:seeAlso <https://doi.org/10.1145/1785481.1785522>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/glvlsi>
dc:subject carbon nanotube field effect transistor, crossbar design, noise margin, read-out circuit (xsd:string)
dc:title Read-out schemes for a CNTFET-based crossbar memory. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document