TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/icccnt/VarmaCJPJ22
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/icccnt/VarmaCJPJ22
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Asisa_Kumar_Panigrahi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ch_Pratyusha_Chowdari
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/D._Jayanthi
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/K._Jamal
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Srinivas_Varma
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FICCCNT54827.2022.9984597
>
foaf:
homepage
<
https://doi.org/10.1109/ICCCNT54827.2022.9984597
>
dc:
identifier
DBLP conf/icccnt/VarmaCJPJ22
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FICCCNT54827.2022.9984597
(xsd:string)
dcterms:
issued
2022
(xsd:gYear)
rdfs:
label
TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Asisa_Kumar_Panigrahi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ch_Pratyusha_Chowdari
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/D._Jayanthi
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/K._Jamal
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Srinivas_Varma
>
swrc:
pages
1-6
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/icccnt/2022
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/icccnt/VarmaCJPJ22/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/icccnt/VarmaCJPJ22
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/icccnt/icccnt2022.html#VarmaCJPJ22
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ICCCNT54827.2022.9984597
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/icccnt
>
dc:
title
TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document