ESD reliability building in 0.25 őľm 60-V p-channel LDMOS DUTs with different embedded SCRs.
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ESD reliability building in 0.25 őľm 60-V p-channel LDMOS DUTs with different embedded SCRs.
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ESD reliability building in 0.25 őľm 60-V p-channel LDMOS DUTs with different embedded SCRs.
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