Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/icce-tw/JhangCH22
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/icce-tw/JhangCH22
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Chih-Chieh_Hsu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Pin-Han_Chen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Wun-Ciang_Jhang
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FICCE-Taiwan55306.2022.9869260
>
foaf:
homepage
<
https://doi.org/10.1109/ICCE-Taiwan55306.2022.9869260
>
dc:
identifier
DBLP conf/icce-tw/JhangCH22
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FICCE-Taiwan55306.2022.9869260
(xsd:string)
dcterms:
issued
2022
(xsd:gYear)
rdfs:
label
Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Chih-Chieh_Hsu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Pin-Han_Chen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Wun-Ciang_Jhang
>
swrc:
pages
569-570
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/icce-tw/2022
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/icce-tw/JhangCH22/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/icce-tw/JhangCH22
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/icce-tw/icce-tw2022.html#JhangCH22
>
rdfs:
seeAlso
<
https://doi.org/10.1109/ICCE-Taiwan55306.2022.9869260
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/icce-tw
>
dc:
title
Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document