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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/icce-tw/JhangCH22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chih-Chieh_Hsu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pin-Han_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wun-Ciang_Jhang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICCE-Taiwan55306.2022.9869260>
foaf:homepage <https://doi.org/10.1109/ICCE-Taiwan55306.2022.9869260>
dc:identifier DBLP conf/icce-tw/JhangCH22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICCE-Taiwan55306.2022.9869260 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chih-Chieh_Hsu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pin-Han_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wun-Ciang_Jhang>
swrc:pages 569-570 (xsd:string)
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owl:sameAs <http://dblp.rkbexplorer.com/id/conf/icce-tw/JhangCH22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/icce-tw/icce-tw2022.html#JhangCH22>
rdfs:seeAlso <https://doi.org/10.1109/ICCE-Taiwan55306.2022.9869260>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icce-tw>
dc:title Dependence of SiO2 Gate Leakage Current on Annealing Temperature of Solution Processed Tin Oxide Semiconductor. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document