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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/icce-tw/LanCZHLL21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jhong-Yi_Lai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shen-Li_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shi-Zhe_Hong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tien-Yu_Lan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu-Jie_Zhou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhi-Wei_Liu>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICCE-TW52618.2021.9602930>
foaf:homepage <https://doi.org/10.1109/ICCE-TW52618.2021.9602930>
dc:identifier DBLP conf/icce-tw/LanCZHLL21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICCE-TW52618.2021.9602930 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
rdfs:label Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jhong-Yi_Lai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shen-Li_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shi-Zhe_Hong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tien-Yu_Lan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu-Jie_Zhou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhi-Wei_Liu>
swrc:pages 1-2 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/icce-tw/2021>
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/icce-tw/icce-tw2021.html#LanCZHLL21>
rdfs:seeAlso <https://doi.org/10.1109/ICCE-TW52618.2021.9602930>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icce-tw>
dc:title Holding-voltage Improvement of UHV Circular nLDMOS Transistors by the Drain-side SCR Engineering. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document