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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/icce-tw/LinCLMYC23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shen-Li_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ting-En_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xing-Chen_Mai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xiu-Yuan_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu-Jie_Chung>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhi-Wei_Liu>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICCE-Taiwan58799.2023.10226885>
foaf:homepage <https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226885>
dc:identifier DBLP conf/icce-tw/LinCLMYC23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICCE-Taiwan58799.2023.10226885 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shen-Li_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ting-En_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xing-Chen_Mai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xiu-Yuan_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu-Jie_Chung>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhi-Wei_Liu>
swrc:pages 225-226 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/icce-tw/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/icce-tw/LinCLMYC23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/icce-tw/LinCLMYC23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/icce-tw/icce-tw2023.html#LinCLMYC23>
rdfs:seeAlso <https://doi.org/10.1109/ICCE-Taiwan58799.2023.10226885>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icce-tw>
dc:title High-voltage nLDMOS Drain Side Schottky/SCR Modulations for Enhancement Reliability Capabilities. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document