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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/iceee/GardunoCE11>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Antonio_Cerdeira>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Magali_Estrada>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Salvador_Ivan_Gardu%E2%88%9A%C4%AAo>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICEEE.2011.6106668>
foaf:homepage <https://doi.org/10.1109/ICEEE.2011.6106668>
dc:identifier DBLP conf/iceee/GardunoCE11 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICEEE.2011.6106668 (xsd:string)
dcterms:issued 2011 (xsd:gYear)
rdfs:label Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Antonio_Cerdeira>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Magali_Estrada>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Salvador_Ivan_Gardu%E2%88%9A%C4%AAo>
swrc:pages 1-5 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/iceee/2011>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/iceee/GardunoCE11/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/iceee/GardunoCE11>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/iceee/iceee2011.html#GardunoCE11>
rdfs:seeAlso <https://doi.org/10.1109/ICEEE.2011.6106668>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/iceee>
dc:title Gate leakage currents modeling for oxynitride gate dielectric in double gate MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document