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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/iceee/Hernandez-Barrios16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Antonio_Cerdeira>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Benjam%E2%88%9A%E2%89%A0n_I%E2%88%9A%C4%AA%E2%88%9A%E2%89%A0guez>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/F._Avila-Herrera>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Magali_Estrada>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Oana_Moldovan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rodrigo_Picos>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._Hernandez-Barrios>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICEEE.2016.7751186>
foaf:homepage <https://doi.org/10.1109/ICEEE.2016.7751186>
dc:identifier DBLP conf/iceee/Hernandez-Barrios16 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICEEE.2016.7751186 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
rdfs:label Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Antonio_Cerdeira>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Benjam%E2%88%9A%E2%89%A0n_I%E2%88%9A%C4%AA%E2%88%9A%E2%89%A0guez>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/F._Avila-Herrera>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Magali_Estrada>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Oana_Moldovan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rodrigo_Picos>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._Hernandez-Barrios>
swrc:pages 1-4 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/iceee/2016>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/iceee/Hernandez-Barrios16/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/iceee/Hernandez-Barrios16>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/iceee/iceee2016.html#Hernandez-Barrios16>
rdfs:seeAlso <https://doi.org/10.1109/ICEEE.2016.7751186>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/iceee>
dc:title Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document