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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Miao_Cui>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qinglei_Bu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wen_Liu_0010>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yutao_Cai>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICICDT.2019.8790836>
foaf:homepage <https://doi.org/10.1109/ICICDT.2019.8790836>
dc:identifier DBLP conf/icicdt/BuCCWL19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICICDT.2019.8790836 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
rdfs:label Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode. (xsd:string)
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wen_Liu_0010>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yutao_Cai>
swrc:pages 1-4 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ICICDT.2019.8790836>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icicdt>
dc:title Experimental Comparison of AlGaN/GaN-on-Si Schottky Barrier Diode With and Without Recessed Anode. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document