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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Aaron_Thean>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Anda_Mocuta>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Diederik_Verkest>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kenichi_Miyaguchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Lars-%E2%88%9A%C3%96ke_Ragnarsson>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Piet_Wambacq>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Praveen_Raghavan>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICICDT.2015.7165885>
foaf:homepage <https://doi.org/10.1109/ICICDT.2015.7165885>
dc:identifier DBLP conf/icicdt/MiyaguchiPRWRMM15 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICICDT.2015.7165885 (xsd:string)
dcterms:issued 2015 (xsd:gYear)
rdfs:label Modeling FinFET metal gate stack resistance for 14nm node and beyond. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Aaron_Thean>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Abdelkarim_Mercha>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Anda_Mocuta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bertrand_Parvais>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Diederik_Verkest>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kenichi_Miyaguchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Lars-%E2%88%9A%C3%96ke_Ragnarsson>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Piet_Wambacq>
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swrc:pages 1-4 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ICICDT.2015.7165885>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icicdt>
dc:title Modeling FinFET metal gate stack resistance for 14nm node and beyond. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document