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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/icicdt/WangLCLYDZ22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Baoshun_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fan_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Guohao_Yu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wen_Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xuan_Chi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yubo_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zhongkai_Du>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICICDT56182.2022.9933128>
foaf:homepage <https://doi.org/10.1109/ICICDT56182.2022.9933128>
dc:identifier DBLP conf/icicdt/WangLCLYDZ22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICICDT56182.2022.9933128 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Baoshun_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fan_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Guohao_Yu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wen_Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xuan_Chi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yubo_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zhongkai_Du>
swrc:pages 57-60 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/icicdt/icicdt2022.html#WangLCLYDZ22>
rdfs:seeAlso <https://doi.org/10.1109/ICICDT56182.2022.9933128>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icicdt>
dc:title TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document