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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/icicdt/YanLZ23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jing_Yan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Junkang_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rui_Zhang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICICDT59917.2023.10332388>
foaf:homepage <https://doi.org/10.1109/ICICDT59917.2023.10332388>
dc:identifier DBLP conf/icicdt/YanLZ23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICICDT59917.2023.10332388 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jing_Yan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Junkang_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rui_Zhang>
swrc:pages 159-162 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/icicdt/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/icicdt/YanLZ23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/icicdt/YanLZ23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/icicdt/icicdt2023.html#YanLZ23>
rdfs:seeAlso <https://doi.org/10.1109/ICICDT59917.2023.10332388>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icicdt>
dc:title Electrical Properties of Each Channels in Vertical Stacked Gate-All-Around Nanosheet s-Si pMOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document