Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/ickii/YenHTLC22
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Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices.
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Influence of Y2O3 Doped HfO2 High-k Films on Electrical Properties of MOS and MIM Devices.
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