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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hichem_Ferhati>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toufik_Bentrcia>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICM50269.2020.9331788>
foaf:homepage <https://doi.org/10.1109/ICM50269.2020.9331788>
dc:identifier DBLP conf/icm2/FerhatiDB20 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICM50269.2020.9331788 (xsd:string)
dcterms:issued 2020 (xsd:gYear)
rdfs:label Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects. (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ICM50269.2020.9331788>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icm2>
dc:title Role of Material Gate Engineering in Improving Gate All Around Junctionless (GAAJL) MOSFET Reliability Against Hot-Carrier Effects. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document