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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bakr_Hesham>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/El-Sayed_A._M._Hasaneen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hesham_F._A._Hamed>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICM48031.2019.9021511>
foaf:homepage <https://doi.org/10.1109/ICM48031.2019.9021511>
dc:identifier DBLP conf/icm2/HeshamHH19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICM48031.2019.9021511 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
rdfs:label Design Procedure for Two-Stage CMOS Opamp using gm/ID design Methodology in 16 nm FinFET Technology. (xsd:string)
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hesham_F._A._Hamed>
swrc:pages 325-329 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ICM48031.2019.9021511>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icm2>
dc:title Design Procedure for Two-Stage CMOS Opamp using gm/ID design Methodology in 16 nm FinFET Technology. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document