Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs).
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/ico/TranNDH22
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Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs).
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Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs).
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