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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/ico/TranNDH22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Loc_T._P._Nguyen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nhu_Q._Tran>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Quan_M._Hoang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tri_M._Do>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1007%2F978-3-031-19958-5%5F101>
foaf:homepage <https://doi.org/10.1007/978-3-031-19958-5_101>
dc:identifier DBLP conf/ico/TranNDH22 (xsd:string)
dc:identifier DOI doi.org%2F10.1007%2F978-3-031-19958-5%5F101 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs). (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Loc_T._P._Nguyen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nhu_Q._Tran>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Quan_M._Hoang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tri_M._Do>
swrc:pages 1078-1085 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/ico/TranNDH22/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/ico/TranNDH22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/ico/ico2022.html#TranNDH22>
rdfs:seeAlso <https://doi.org/10.1007/978-3-031-19958-5_101>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/ico>
dc:title Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs). (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document