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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hichem_Ferhati>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toufik_Bentrcia>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1145%2F3330089.3330470>
foaf:homepage <https://doi.org/10.1145/3330089.3330470>
dc:identifier DBLP conf/icsent/ZerroumdaDBF18 (xsd:string)
dc:identifier DOI doi.org%2F10.1145%2F3330089.3330470 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. (xsd:string)
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swrc:pages 35:1-35:5 (xsd:string)
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dc:title Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications. (xsd:string)
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rdf:type swrc:InProceedings
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