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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Meng_Zhao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qian_Xie>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qiao_He>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zheng_Wang_0050>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Zixuan_Yang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FICTA53157.2021.9661818>
foaf:homepage <https://doi.org/10.1109/ICTA53157.2021.9661818>
dc:identifier DBLP conf/icta3/HeXZY021 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FICTA53157.2021.9661818 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
rdfs:label An Analytical Model of Energy Band Considering Drain Doping Effect of TFET With Exponential Barrier. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Meng_Zhao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Qian_Xie>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Qiao_He>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zheng_Wang_0050>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Zixuan_Yang>
swrc:pages 109-110 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/ICTA53157.2021.9661818>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/icta3>
dc:title An Analytical Model of Energy Band Considering Drain Doping Effect of TFET With Exponential Barrier. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document