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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/iecon/GuicharrousseAW22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Md._Rishad_Ahmed>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pablo_Guicharrousse>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Patrick_Wheeler_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pericle_Zanchetta>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIECON49645.2022.9968842>
foaf:homepage <https://doi.org/10.1109/IECON49645.2022.9968842>
dc:identifier DBLP conf/iecon/GuicharrousseAW22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIECON49645.2022.9968842 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label New approach for comparing Modular Multilevel Converter submodule losses considering IGBT and SiC MOSFET devices. (xsd:string)
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Patrick_Wheeler_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pericle_Zanchetta>
swrc:pages 1-6 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/IECON49645.2022.9968842>
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dc:title New approach for comparing Modular Multilevel Converter submodule losses considering IGBT and SiC MOSFET devices. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document