High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/imw2/BreuilNRBABRbR22
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High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.
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High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction.
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