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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/imw2/KukHKKK23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bong_Ho_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jae-Hoon_Han>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Junpyo_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sang-Hyeon_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Song-Hyeon_Kuk>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIMW56887.2023.10145967>
foaf:homepage <https://doi.org/10.1109/IMW56887.2023.10145967>
dc:identifier DBLP conf/imw2/KukHKKK23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIMW56887.2023.10145967 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bong_Ho_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jae-Hoon_Han>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Junpyo_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sang-Hyeon_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Song-Hyeon_Kuk>
swrc:pages 1-4 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/imw2/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/imw2/KukHKKK23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/imw2/KukHKKK23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/imw2/imw2023.html#KukHKKK23>
rdfs:seeAlso <https://doi.org/10.1109/IMW56887.2023.10145967>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/imw2>
dc:title Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document