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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/imw2/YoonHCKKJKM22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Changhan_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Daehyun_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Garam_Choi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ildo_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kyunghoon_Min>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seok_Min_Jeon>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sung-In_Hong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sunghyun_Yoon>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIMW52921.2022.9779278>
foaf:homepage <https://doi.org/10.1109/IMW52921.2022.9779278>
dc:identifier DBLP conf/imw2/YoonHCKKJKM22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIMW52921.2022.9779278 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Changhan_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Daehyun_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Garam_Choi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ildo_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kyunghoon_Min>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seok_Min_Jeon>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sung-In_Hong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sunghyun_Yoon>
swrc:pages 1-4 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/imw2/imw2022.html#YoonHCKKJKM22>
rdfs:seeAlso <https://doi.org/10.1109/IMW52921.2022.9779278>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/imw2>
dc:title Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document