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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/AcurioTJBD21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Benoit_Bakeroot>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Brice_De_Jaeger>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Eliana_Acurio>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Lionel_Trojman>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Stefaan_Decoutere>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS46558.2021.9405163>
foaf:homepage <https://doi.org/10.1109/IRPS46558.2021.9405163>
dc:identifier DBLP conf/irps/AcurioTJBD21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS46558.2021.9405163 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
rdfs:label ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Benoit_Bakeroot>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Brice_De_Jaeger>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Eliana_Acurio>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Lionel_Trojman>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Stefaan_Decoutere>
swrc:pages 1-6 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2021>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/AcurioTJBD21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/AcurioTJBD21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2021.html#AcurioTJBD21>
rdfs:seeAlso <https://doi.org/10.1109/IRPS46558.2021.9405163>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document