Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology.
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/irps/BenoistDFAC15
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/A._Benoist
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Bruno_Allard
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Philippe_Candelier
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/S._Denorme
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/X._Federspiel
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2015.7112804
>
foaf:
homepage
<
https://doi.org/10.1109/IRPS.2015.7112804
>
dc:
identifier
DBLP conf/irps/BenoistDFAC15
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FIRPS.2015.7112804
(xsd:string)
dcterms:
issued
2015
(xsd:gYear)
rdfs:
label
Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/A._Benoist
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Bruno_Allard
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Philippe_Candelier
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/S._Denorme
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/X._Federspiel
>
swrc:
pages
3
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/irps/2015
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/irps/BenoistDFAC15/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/irps/BenoistDFAC15
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/irps/irps2015.html#BenoistDFAC15
>
rdfs:
seeAlso
<
https://doi.org/10.1109/IRPS.2015.7112804
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/irps
>
dc:
title
Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document