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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/BezzaRRFMDHG15>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Bezza>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cheikh_Diouf>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/David_Roy_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C2%A9rard_Ghibaudo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/M._Rafik>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/P._Mora>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Vincent_Huard>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/X._Federspiel>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2015.7112740>
foaf:homepage <https://doi.org/10.1109/IRPS.2015.7112740>
dc:identifier DBLP conf/irps/BezzaRRFMDHG15 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS.2015.7112740 (xsd:string)
dcterms:issued 2015 (xsd:gYear)
rdfs:label Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Bezza>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Cheikh_Diouf>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/David_Roy_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C2%A9rard_Ghibaudo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/M._Rafik>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._Mora>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Vincent_Huard>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/X._Federspiel>
swrc:pages 5 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2015>
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owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/BezzaRRFMDHG15>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2015.html#BezzaRRFMDHG15>
rdfs:seeAlso <https://doi.org/10.1109/IRPS.2015.7112740>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document