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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/FaveroCSBFGBDMZM23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._Cavaliere>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carlo_De_Santi>
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dc:creator <https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Karen_Geens>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Matteo_Borga>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Stefaan_Decoutere>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/W._Gon%E2%88%9A%C3%9Falez_Filho>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48203.2023.10117667>
foaf:homepage <https://doi.org/10.1109/IRPS48203.2023.10117667>
dc:identifier DBLP conf/irps/FaveroCSBFGBDMZM23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48203.2023.10117667 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._Cavaliere>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Benoit_Bakeroot>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carlo_De_Santi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Davide_Favero>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
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swrc:pages 1-6 (xsd:string)
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rdfs:seeAlso <https://doi.org/10.1109/IRPS48203.2023.10117667>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document