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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/FiorenzaBMSGR22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Angelo_Alberto_Messina>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Corrado_Bongiorno>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Roccaforte>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Filippo_Giannazzo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mario_Saggio>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Patrick_Fiorenza>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48227.2022.9764490>
foaf:homepage <https://doi.org/10.1109/IRPS48227.2022.9764490>
dc:identifier DBLP conf/irps/FiorenzaBMSGR22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48227.2022.9764490 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Angelo_Alberto_Messina>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Corrado_Bongiorno>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Roccaforte>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Filippo_Giannazzo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mario_Saggio>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Patrick_Fiorenza>
swrc:pages 3 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2022>
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owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/FiorenzaBMSGR22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2022.html#FiorenzaBMSGR22>
rdfs:seeAlso <https://doi.org/10.1109/IRPS48227.2022.9764490>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title SiO2/4H-SiC interfacial chemistry as origin of the threshold voltage instability in power MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document