Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.
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bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/irps/FiorenzaCARZSBGR23
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Alfio_Russo
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/C._Bongiorno
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Edoardo_Zanetti
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Roccaforte
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Filippo_Giannazzo
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Francesco_Cordiano
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mario_Saggio
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mario_Santo_Alessandrino
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Patrick_Fiorenza
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FIRPS48203.2023.10118116
>
foaf:
homepage
<
https://doi.org/10.1109/IRPS48203.2023.10118116
>
dc:
identifier
DBLP conf/irps/FiorenzaCARZSBGR23
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FIRPS48203.2023.10118116
(xsd:string)
dcterms:
issued
2023
(xsd:gYear)
rdfs:
label
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Alfio_Russo
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/C._Bongiorno
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Edoardo_Zanetti
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Fabrizio_Roccaforte
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Filippo_Giannazzo
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Francesco_Cordiano
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mario_Saggio
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mario_Santo_Alessandrino
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Patrick_Fiorenza
>
swrc:
pages
1-4
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/irps/2023
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/irps/FiorenzaCARZSBGR23/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/irps/FiorenzaCARZSBGR23
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/irps/irps2023.html#FiorenzaCARZSBGR23
>
rdfs:
seeAlso
<
https://doi.org/10.1109/IRPS48203.2023.10118116
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/irps
>
dc:
title
Consideration on the extrapolation of the low insulator field TDDB in 4H-SiC power MOSFETs.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document