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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/FregolentMSBMZM23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alberto_Marcuzzi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carlo_De_Santi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Eldad_Bahat-Treidel>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Manuel_Fregolent>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48203.2023.10117719>
foaf:homepage <https://doi.org/10.1109/IRPS48203.2023.10117719>
dc:identifier DBLP conf/irps/FregolentMSBMZM23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48203.2023.10117719 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alberto_Marcuzzi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carlo_De_Santi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Eldad_Bahat-Treidel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Manuel_Fregolent>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
swrc:pages 1-5 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/FregolentMSBMZM23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/FregolentMSBMZM23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2023.html#FregolentMSBMZM23>
rdfs:seeAlso <https://doi.org/10.1109/IRPS48203.2023.10117719>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Trapping in $\text{Al}_{2}\mathrm{O}_{3}/\text{GaN}$ MOScaps investigated by fast capacitive techniques. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document