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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/GarbaSeybouFMSCHB23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alain_Bravaix>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Florian_Cacho>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Frederic_Monsieur>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Joycelyn_Hai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mathieu_Sicre>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tidjani_Garba-Seybou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xavier_Federspiel>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48203.2023.10117725>
foaf:homepage <https://doi.org/10.1109/IRPS48203.2023.10117725>
dc:identifier DBLP conf/irps/GarbaSeybouFMSCHB23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48203.2023.10117725 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alain_Bravaix>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Florian_Cacho>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Frederic_Monsieur>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Joycelyn_Hai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mathieu_Sicre>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tidjani_Garba-Seybou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xavier_Federspiel>
swrc:pages 1-8 (xsd:string)
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owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/GarbaSeybouFMSCHB23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2023.html#GarbaSeybouFMSCHB23>
rdfs:seeAlso <https://doi.org/10.1109/IRPS48203.2023.10117725>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document