[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/HaoSG21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Amartya_Ghosh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jifa_Hao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuhang_Sun>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS46558.2021.9405229>
foaf:homepage <https://doi.org/10.1109/IRPS46558.2021.9405229>
dc:identifier DBLP conf/irps/HaoSG21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS46558.2021.9405229 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
rdfs:label Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Amartya_Ghosh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jifa_Hao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuhang_Sun>
swrc:pages 1-4 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2021>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/HaoSG21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/HaoSG21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2021.html#HaoSG21>
rdfs:seeAlso <https://doi.org/10.1109/IRPS46558.2021.9405229>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Charge pumping source-drain current for gate oxide interface trap density in MOSFETs and LDMOS. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document