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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/HuangLTWHLLH18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._K._Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/D._S._Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._H._Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jun_He>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ryan_Lu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._F._Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._S._Huang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._S._Tsai>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2018.8353651>
foaf:homepage <https://doi.org/10.1109/IRPS.2018.8353651>
dc:identifier DBLP conf/irps/HuangLTWHLLH18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS.2018.8353651 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._K._Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/D._S._Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._H._Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jun_He>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ryan_Lu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._F._Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._S._Huang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._S._Tsai>
swrc:pages 6 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2018>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/HuangLTWHLLH18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/HuangLTWHLLH18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2018.html#HuangLTWHLLH18>
rdfs:seeAlso <https://doi.org/10.1109/IRPS.2018.8353651>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Comprehensive device and product level reliability studies on advanced CMOS technologies featuring 7nm high-k metal gate FinFET transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document