Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/irps/IgarashiUTTSN18
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Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET.
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Study of impact of BTI's local layout effect including recovery effect on various standard-cells in 10nm FinFET.
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