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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/KojimaYFK19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jun_Furuta>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kazutoshi_Kobayashi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kentaro_Kojima>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kodai_Yamada>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2019.8720481>
foaf:homepage <https://doi.org/10.1109/IRPS.2019.8720481>
dc:identifier DBLP conf/irps/KojimaYFK19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS.2019.8720481 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
rdfs:label An Accurate Device-Level Simulation Method to Estimate Cross Sections of Single Event Upsets by Silicon Thickness in Raised Layer. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jun_Furuta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kazutoshi_Kobayashi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kentaro_Kojima>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kodai_Yamada>
swrc:pages 1-5 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2019>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/KojimaYFK19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/KojimaYFK19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2019.html#KojimaYFK19>
rdfs:seeAlso <https://doi.org/10.1109/IRPS.2019.8720481>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title An Accurate Device-Level Simulation Method to Estimate Cross Sections of Single Event Upsets by Silicon Thickness in Raised Layer. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document