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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/LeeCHKLCTL18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chih-Yuan_Lu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ding-Jhang_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Li-Kuang_Kuo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ming-Yi_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/T.-Y._Chang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/U._J._Tzeng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/W.-F._Hsueh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yen-Hai_Chao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2018.8353624>
foaf:homepage <https://doi.org/10.1109/IRPS.2018.8353624>
dc:identifier DBLP conf/irps/LeeCHKLCTL18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS.2018.8353624 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label Electrical method to localize the high-resistance of nanoscale CoSi2 word-line for OTP memories. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chih-Yuan_Lu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ding-Jhang_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Li-Kuang_Kuo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ming-Yi_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/T.-Y._Chang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/U._J._Tzeng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/W.-F._Hsueh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yen-Hai_Chao>
swrc:pages 6 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2018>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/LeeCHKLCTL18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/LeeCHKLCTL18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2018.html#LeeCHKLCTL18>
rdfs:seeAlso <https://doi.org/10.1109/IRPS.2018.8353624>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Electrical method to localize the high-resistance of nanoscale CoSi2 word-line for OTP memories. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document