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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/LiLLGC23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._H._Liu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._C._Guo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._P._Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/M._Y._Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Steve_S._Chung>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48203.2023.10117748>
foaf:homepage <https://doi.org/10.1109/IRPS48203.2023.10117748>
dc:identifier DBLP conf/irps/LiLLGC23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48203.2023.10117748 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 108 Endurance and Excellent Retention. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._H._Liu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._C._Guo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._P._Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/M._Y._Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Steve_S._Chung>
swrc:pages 1-7 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2023>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/LiLLGC23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/LiLLGC23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2023.html#LiLLGC23>
rdfs:seeAlso <https://doi.org/10.1109/IRPS48203.2023.10117748>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title A World First QLC RRAM: Highly Reliable Resistive-Gate Flash with Record 108 Endurance and Excellent Retention. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document