PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics.
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PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics.
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PBTI evaluation of In0.65Ga0.35As/In0.53Ga0.47As nanowire FETs with Al2O3 and LaAlO3 gate dielectrics.
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