Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device.
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dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/irps/LuoSMRZSP20
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Danny_Shum
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Fan_Zhang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kalya_Shubhakar
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Kin_Leong_Pey
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Laiqiang_Luo
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Nagarajan_Raghavan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Sen_Mei
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FIRPS45951.2020.9128911
>
foaf:
homepage
<
https://doi.org/10.1109/IRPS45951.2020.9128911
>
dc:
identifier
DBLP conf/irps/LuoSMRZSP20
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FIRPS45951.2020.9128911
(xsd:string)
dcterms:
issued
2020
(xsd:gYear)
rdfs:
label
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Danny_Shum
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Fan_Zhang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kalya_Shubhakar
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Kin_Leong_Pey
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Laiqiang_Luo
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Nagarajan_Raghavan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Sen_Mei
>
swrc:
pages
1-6
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/irps/2020
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/irps/LuoSMRZSP20/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/irps/LuoSMRZSP20
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/irps/irps2020.html#LuoSMRZSP20
>
rdfs:
seeAlso
<
https://doi.org/10.1109/IRPS45951.2020.9128911
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/irps
>
dc:
title
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document