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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/MahajanCAVKR22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bikram_Kishore_Mahajan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dhanoop_Varghese>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Muhammad_Ashraful_Alam>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Srikanth_Krishnan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Vijay_Reddy>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yen-Pu_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48227.2022.9764435>
foaf:homepage <https://doi.org/10.1109/IRPS48227.2022.9764435>
dc:identifier DBLP conf/irps/MahajanCAVKR22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48227.2022.9764435 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bikram_Kishore_Mahajan>
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foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Muhammad_Ashraful_Alam>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Srikanth_Krishnan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Vijay_Reddy>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yen-Pu_Chen>
swrc:pages 10 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2022>
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rdfs:seeAlso <https://doi.org/10.1109/IRPS48227.2022.9764435>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document