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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/MoensGSCLMFD23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/F._Geenen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._Franchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/J._Lettens>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/JF_Cano>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/L._De_Schepper>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Martin_Domeij>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Peter_Moens>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Maslougkas>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48203.2023.10117802>
foaf:homepage <https://doi.org/10.1109/IRPS48203.2023.10117802>
dc:identifier DBLP conf/irps/MoensGSCLMFD23 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48203.2023.10117802 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
rdfs:label The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/F._Geenen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._Franchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/J._Lettens>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/JF_Cano>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/L._De_Schepper>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Martin_Domeij>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Peter_Moens>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Maslougkas>
swrc:pages 1-5 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2023.html#MoensGSCLMFD23>
rdfs:seeAlso <https://doi.org/10.1109/IRPS48203.2023.10117802>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document