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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/OSullivanRRWLRC19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alessio_Spessot>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Barry_J._O%27Sullivan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ben_Kaczer>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dimitri_Linten>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/E._Dentoni_Litta>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gerhard_Rzepa>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jacopo_Franco>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/N._Horiguchi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/O._Richard>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pierre_Fazan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Romain_Ritzenthaler>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/T._Conard>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tibor_Grasser>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/V._Machkaoutsan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Z._Wu>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2019.8720598>
foaf:homepage <https://doi.org/10.1109/IRPS.2019.8720598>
dc:identifier DBLP conf/irps/OSullivanRRWLRC19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS.2019.8720598 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
rdfs:label Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ńł/Metal Gate Devices. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alessio_Spessot>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Barry_J._O%27Sullivan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ben_Kaczer>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dimitri_Linten>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/E._Dentoni_Litta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gerhard_Rzepa>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jacopo_Franco>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/N._Horiguchi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/O._Richard>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pierre_Fazan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Romain_Ritzenthaler>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/T._Conard>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tibor_Grasser>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/V._Machkaoutsan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Z._Wu>
swrc:pages 1-8 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2019>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/OSullivanRRWLRC19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/OSullivanRRWLRC19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2019.html#OSullivanRRWLRC19>
rdfs:seeAlso <https://doi.org/10.1109/IRPS.2019.8720598>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ńł/Metal Gate Devices. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document