Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/conf/irps/PanarellaKSVSCLTARKA23
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/conf/irps/PanarellaKSVSCLTARKA23
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ben_Kaczer
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Cesar_J._Lockhart_de_la_Rosa
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Daire_Cott
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Dennis_Lin
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Devin_Verreck
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Gouri_Sankar_Kar
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/I._Asselberghs
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/L._Panarella
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Quentin_Smets
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Stanislav_Tyaginov
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Tom_Schram
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Valeri_Afanas%27ev
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FIRPS48203.2023.10117803
>
foaf:
homepage
<
https://doi.org/10.1109/IRPS48203.2023.10117803
>
dc:
identifier
DBLP conf/irps/PanarellaKSVSCLTARKA23
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FIRPS48203.2023.10117803
(xsd:string)
dcterms:
issued
2023
(xsd:gYear)
rdfs:
label
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ben_Kaczer
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Cesar_J._Lockhart_de_la_Rosa
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Daire_Cott
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Dennis_Lin
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Devin_Verreck
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Gouri_Sankar_Kar
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/I._Asselberghs
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/L._Panarella
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Quentin_Smets
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Stanislav_Tyaginov
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Tom_Schram
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Valeri_Afanas%27ev
>
swrc:
pages
1-6
(xsd:string)
dcterms:
partOf
<
https://dblp.l3s.de/d2r/resource/publications/conf/irps/2023
>
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/conf/irps/PanarellaKSVSCLTARKA23/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/conf/irps/PanarellaKSVSCLTARKA23
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/conf/irps/irps2023.html#PanarellaKSVSCLTARKA23
>
rdfs:
seeAlso
<
https://doi.org/10.1109/IRPS48203.2023.10117803
>
swrc:
series
<
https://dblp.l3s.de/d2r/resource/conferences/irps
>
dc:
title
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:InProceedings
rdf:
type
foaf:Document