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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/SasangkaSGT15>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carl_V._Thompson>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chee_Lip_Gan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Govindo_J._Syaranamual>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wardhana_A._Sasangka>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2015.7112768>
foaf:homepage <https://doi.org/10.1109/IRPS.2015.7112768>
dc:identifier DBLP conf/irps/SasangkaSGT15 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS.2015.7112768 (xsd:string)
dcterms:issued 2015 (xsd:gYear)
rdfs:label Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carl_V._Thompson>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chee_Lip_Gan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Govindo_J._Syaranamual>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wardhana_A._Sasangka>
swrc:pages 6 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2015>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/SasangkaSGT15/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/SasangkaSGT15>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2015.html#SasangkaSGT15>
rdfs:seeAlso <https://doi.org/10.1109/IRPS.2015.7112768>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Origin of physical degradation in AlGaN/GaN on Si high electron mobility transistors under reverse bias stressing. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document