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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/Sasse18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Guido_T._Sasse>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS.2018.8353698>
foaf:homepage <https://doi.org/10.1109/IRPS.2018.8353698>
dc:identifier DBLP conf/irps/Sasse18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS.2018.8353698 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
rdfs:label Hot carrier induced TDDB in HV MOS: Lifetime model and extrapolation to use conditions. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Guido_T._Sasse>
swrc:pages 3-1 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2018>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/Sasse18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/Sasse18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2018.html#Sasse18>
rdfs:seeAlso <https://doi.org/10.1109/IRPS.2018.8353698>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Hot carrier induced TDDB in HV MOS: Lifetime model and extrapolation to use conditions. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document