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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/conf/irps/TeraoHKSW22>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Heiji_Watanabe>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takayoshi_Shimura>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takuji_Hosoi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Takuma_Kobayashi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yutaka_Terao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FIRPS48227.2022.9764433>
foaf:homepage <https://doi.org/10.1109/IRPS48227.2022.9764433>
dc:identifier DBLP conf/irps/TeraoHKSW22 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FIRPS48227.2022.9764433 (xsd:string)
dcterms:issued 2022 (xsd:gYear)
rdfs:label Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Heiji_Watanabe>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takayoshi_Shimura>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takuji_Hosoi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Takuma_Kobayashi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yutaka_Terao>
swrc:pages 66-1 (xsd:string)
dcterms:partOf <https://dblp.l3s.de/d2r/resource/publications/conf/irps/2022>
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/conf/irps/TeraoHKSW22/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/conf/irps/TeraoHKSW22>
rdfs:seeAlso <http://dblp.uni-trier.de/db/conf/irps/irps2022.html#TeraoHKSW22>
rdfs:seeAlso <https://doi.org/10.1109/IRPS48227.2022.9764433>
swrc:series <https://dblp.l3s.de/d2r/resource/conferences/irps>
dc:title Characterization of Electron Traps in Gate Oxide of m-plane SiC MOS Capacitors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:InProceedings
rdf:type foaf:Document